3.7
RF power transistors
NEW :
RF power transistor selection guide on www.nxp.com/rfpower
Easy-to-use parametric filters help you choose the right RF
power transistor for your design.
3.7.1
RF power transistors for base stations
Device naming conventions RF power transistors for base stations
-45 P R B N G V
video bandwidth enhanced
gullwing-shaped leads
specialty
option: current sense lead
enhanced ruggedness
push-pull device
P1dB power
option: earless package
option: low thermal resistivity
operating frequency (in 100MHz; maximum)
G: standard LDMOS
LDMOS technology generation
F: LDMOS transistor in ceramic package
C: LDMOS transistor in air cavity plastic (ACP) package
D: fully integrated Doherty amplifier
M: MMIC module
L: high frequency power transistor
B: semiconductor die made of Si
B L F 6 G
22 L S
Why choose NXP‘s RF power transistors for base stations:
`
Leading technology (generations 6, 7, and 8 of LDMOS)
`
Highest efficiency
`
Best ruggedness
`
Advanced Doherty amplifier designs
`
Very broad band (video bandwidth enhanced) devices
`
Industry’s first 3.8 GHz Doherty
`
Industry's first three-way, 900 MHz Doherty
`
Industry's first 50 V, 600 W, single-package Doherty
NXP offers complete line-ups of RF power transistors operating from 800 MHz right up to 3.8 GHz for base stations,
covering all cellular technologies [MC-GSM/EDGE, TDMA, (TD-S)CDMA, W-CDMA/UMTS, LTE] and WiMAX infrastructures.
3.7.1.1
Type
0.7 - 1.0 GHz line-up
Test signal performance
Product
Driver
MMIC
Driver/final
f
min
(MHz)
700
920
700
700
700
850
920
920
688
700
700
700
700
700
700
700
700
900
f
max
(MHz)
2200
960
1000
1000
900
960
960
960
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
P1dB
(W)
10
30
40
45
140
300
160
250
200
135
160
160
160
200
260
270
400
140
Matching
-
I/O
I
I
O
I/O
I/O
I/O
I
I
-
I
I/O
I/O
I
I/O
I/O
O
VDS
(V)
28
28
28
28
28
28
30
30
28
28
50
32
30
28
28
28
28
28
P
L
(W)
2
2
2.5
1
35
60
35
60
40
26.5
45
32
35
45
40
56
79
35
BO
(dB)
7.0
11.8
12.0
16.5
6.0
7.0
6.6
6.2
7.0
7.1
5.5
7.0
6.6
6.5
8.1
6.8
7.0
6.0
η
D
(%)
26
11.5
15
8
28
30
29
30.5
28.5
28
30
27
28
28
26.5
28
27
28
G
p
(dB)
17
29
23
23
19
19
19.7
19.5
20
21
20
22.5
30
19.3
22
19.6
19.4
19
Test signal
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
Package
BLF6G10(S)-45
BLF8G10L(S)-300P*
BLF8G10L(S)-160
BLF7G10L(S)-250
BLF6G10(LS)-200RN
BLF6G10(LS)-135RN
BLF6H10L(S)-160
BLF6G10(LS)-160RN
BLF8G10L(S)-160V*
BLF6G10L(S)-260PRN
BLF8G10LS-400PGV*
BLP7G09S-140P(G)*
Final
Bold red
= new, highly recommended product
* Check status in section 3.1, as this type is not yet released for mass production
NXP Semiconductors RF Manual 16
th
edition
95
Products by function
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