2.5.3
QUBiC4 Si and SiGe:C transistors for any RF function
NXP wideband transistors BFU6x0F & BFU7x0F
These next-generation devices offer the best RF noise figure versus gain performance, drawing the
lowest current. This performance allows for better signal reception at low power and enables RF
receivers to operate more robustly in noisy environments.
Key features
40/110 GHz transition frequency allows for applications
up to 18 GHz and beyond
High gain of 13.5 dB at 12 GHz with a low noise figure of 1.45 dB
High linearity of 34 dBm (OIP3) at 1.8 GHz
Consuming only 3 mA to generate 13.5 dB gain at 12 GHz
Plastic surface-mount SOT343F package for high
performance and easy manufacturing
Applications
Wideband applications that require
- Low-noise amplifiers
- High linearity and high output amplifiers
- Buffer amplifiers
- Mixers
- Oscillators
The devices in this family of sixth- (Si) and seventh- (SiGe:C)
generation RF transistors can be used to perform nearly any RF
function. For example, the BFUx10F, BFUx30F, BFU725/N1
Selection guide – function
Function
Frequency
range
Type Band
Higher transition frequencies (40 to 110 GHz) enable higher
application frequencies (24/77 GHz car radar, 18 GHz Ka band,
3.5-3.7 WiMas, etc.), and the devices meet the low current
requirements of wideband applications.
As a result, these devices are ideal for use in a very wide
range of applications: second and third LNA stage and
mixer stage in DBS LNBs, Ka/Ku band DROs, satellite radio
(SDARS) LNA, C-band/X-band high-output buffer amplifiers,
AMR, WLAN/WiFi, ZigBee, Bluetooth, FM radio, GPS, cellular
(LTE, UMTS), mobile TV, RKE, high-linearity applications, low
current battery-equipped applications, low-noise amplifiers for
microwave communications systems, medium output power
applications, microwave driver/buffer applications, and more.
LNAs, mixers, frequency multipliers, buffers
<6 GHz
L,S,C
•
•
•
•
•
•
•
•
•
6 GHz – 12 GHz
X, Ku low
•
•
12 GHz –
+18 GHz
Ku high, Ka
High-linearity, high-output amplifiers & drivers
<6 GHz
L,S,C
•
•
•
•
•
•
•
6 GHz – 12 GHz
X, Ku low
12 GHz – 18 GHz
Ku high
<6 GHz
L,S,C
•
•
•
•
•
•
•
•
Oscillators
6 GHz – 12 GHz
X, Ku low
12 GHz –
+18 GHz
Ku high, Ka
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Red
= application note available on NXP.com
Selection guide – specification
V
CEO
[max] (V)
f
T
[typ] (GHz)
I
C
[max] (mA)
Typenumber
PL
(1dB)
[typ]
(dBm)
generation
P
tot
[max]
(mW)
IP3 [typ]
(dBm)
@ f (GHz)
@ f (GHz)
@ f (GHz)
@ f (GHz)
@ I
C
(mA)
@ I
C
(mA)
@ I
C
(mA)
@ I
C
(mA)
Package
name
@ V
CE
(V)
@ V
CE
(V)
@ V
CE
(V)
Package
Polarity
NF (dB)
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
DFP4
DFP4
DFP4
DFP4
DFP4
DFP4
DFP4
DFP4
DFP4
6
th
6
th
6
th
6
th
7
th
7
th
7
th
7
th
7
th
15
21
21
18
43
55
55
45
25
5.5
5.5
5.5
5.5
2.8
2.8
2.8
2.8
2.8
10
30
60
100
10
40
30
70
100
136
200
225
230
136
136
197
220
234
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
1.1
0.85
0.6
0.6
0.85
0.7
0.8
0.4
0.4
2.4
2.4
1.5
1.5
5.8
5.8
5.8
1.5
1.5
2
3
6
15
2
5
5
12
20
2
2
2
2
2
2
2
2
2
1.7
1.3
1.2
0.7
1.45
1.1
1.3
0.5
0.5
NF (dB)
5.8
5.8
5.8
2.4
12
12
12
2.4
2.4
2
3
6
15
2
5
5
12
20
2
2
2
2
2
2
2
2
2
3
12.5
18.5
20
4.5
8
12.5
18.5
19
5.8
5.8
5.8
2.4
5.8
5.8
5.8
5.8
2.4
10
30
60
70
5
25
15
30
60
1.5
2.5
4
4
2.5
2
2.5
2.5
2.5
18
27.5
28
33
19.5
19
29
33
34
5.8
5.8
5.8
2.4
5.8
5.8
5.8
5.8
2.4
10
30
40
70
10
25
20
30
30
NXP Semiconductors RF Manual 16
th
edition
@ V
CE
(V)
1.5
2.5
4
4
1.5
2
2.5
2.5
2.5
65
Focus applications,
products & technologies
can be used as low-noise amplifiers, while the BFUx60F
and BFUx90F can be used as high-linearity and high-output
amplifiers. Other options include using these transistors as
buffer amplifiers, mixers, and oscillators.
PHILIPS [ NXP SEMICONDUCTORS ]
