2.3.2
Complete satellite portfolio for all LNB architectures
NXP Satellite LNB devices TFF101xHN, BFU710F/730F, and BGA28xx
Designed for use in LNAs, mixers, and IF amplifiers, these robust, small-footprint products are the latest
additions to NXP's leading portfolio for satellite LNB architectures. They are manufactured in NXP’s
groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technologies.
Fully integrated Ku-band downconverters TFF101xHN
The TFF101xHN is a family of fully integrated downconverters
for Ku-band LNBs. They give the best RF performance in terms
of phase noise, gain, and noise figure at the lowest current
consumption in the market.
Ku-band downconverter TFF101xHN/N1 for LNB
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Typical application: Universal single LNB & twin LNB
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Ultra-low current consumption: 52 mA over PVT
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Only 7 external components
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No inductors
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Single supply domain: 5 V
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Uses low-cost fundamental 25 MHz crystal
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High PL1dBo = 6 dBm / 3OIPo = 16 dBm
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Best-in-class PN < 1.4 deg RMS
- 10 kHz to 13 MHz integration bandwidth
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Multiple gain types available
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Flat gain over frequency (< 2 dBpp)
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Input & output matched 50 Ω
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Small leadless DHVQFN16 package (2.5 x 3.5 x 0.85 mm)
RF transistors BFU710F/730F
The BFU710F and BFU730F are wideband RF transistors that can
be used as an LNA or as a mixer for a DBS LNB in the Ku-band.
In either application, they deliver good noise and linearity, a
higher gain at a lower current consumption compared to their
GaAs pHEMT equivalents, and the cost advantage of silicon.
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Typical application: LNA2 for single-output LNB
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Overall similar RF performance to GaAs pHemt LNAs
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Power consumption: 3.5 mA
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Single supply: 3/5/6 V
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High RF gain: 13.5 dB
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Low noise figure: 1.6 dB
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Linearity (OIP3): 12 dBm
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Typical application: Active mixer for single-output LNB
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Single supply 3/5/6 V
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Low power consumption: 2.5 mA
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LO drive < 0 dBm
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SSB noise figure < 8 dB (including BPF at the input)
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SSB conversion gain > 5 dB (including BPF at the input)
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Linearity (OIP3) > 0 dBm
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LO-RF isolation min 20 dB
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RF match better than 10 dB
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IF match better than 8 dB
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Typical application: LNA2 and LNA3 for multi-output LNB
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Overall similar RF performance to GaAs pHemt LNAs
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Power consumption: 11 mA
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Single supply 3/5/6 V
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Very high RF gain: 11.5 dB
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Low noise figure: 1.25 dB
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Linearity (OIP3) > 17 dBm
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Return loss > 10 dB
MMICs BGA28xx as IF amplifiers (first stage & output
stage)
For compatibility with existing designs, the series uses market
standard packages: the SOT363 and the pin-compliant
SOT363F. The pinning is identical to NXP’s current gain
block family, and the blocks deliver similar noise figures. New
features include flatter gain, a positive gain slope, improved
P1dB vs Icc, and no necessity for an output inductor.
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Internally matched at 50 Ω
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Gain slope > 0.5 dB
56
NXP Semiconductors RF Manual 16
th
edition
PHILIPS [ NXP SEMICONDUCTORS ]
