2.1.4
The new generation of LDMOS RF power for wireless infrastructures: NXP's Gen8
NXP announced last year the 8th generation of its renowned RF power device portfolio for base stations.
Listening carefully to the world’s leading infrastructure providers and understanding their requirements, we
took a holistic approach to the development of Gen8. This means that we scrutinized every detail of a power
transistor and reconsidered the entire “transistor system” to ceate a new generation that performs markedly
better than its predecessors, and its competitors, and again sets standards for the industry.
Gen8 addresses the key trends in the wireless
infrastructure industry
`
Increasing signal bandwidths up to 100 MHz to enable
full-band operation
`
Cost sensitivity: peak powers up to 270 Watts in SOT502-
sized packages
`
Reduction in the size/weight/volume of the cabinet
`
The ongoing need for greater electrical efficiency to reduce
cooling requirements and operational expenditures
`
Ever-increasing output power
`
The need to deploy multi-standard and future-proof
solutions
Gen8 is the answer to all these often conflicting requirements.
The package and die design, as well as the input and output
match structures, have been optimized to enable wideband,
affordable, compact, multi-standard, and highly efficient
Doherty power amplifiers. Solutions for all cellular frequency
bands are currently being sampled and are in production or
will be released throughout 2012.
The first wave of Gen8 transistors
Type
BLF8G10L(S)-160
BLF8G10L(S)-160V
BLF8G10L(S)-300P
BLF8G10LS-400PGV
BLF8G20L(S)-200V
BLF8G22LS-400PGV
BLF8G24L(S)-200P
BLF8G27LS-140V
BLF8G27LS-200PGV
BLF8G27LS-280PGV
f
min
(MHz)
920
700
700
700
850
700
1800
1800
1800
2000
2000
2000
2000
2300
2500
2600
2500
2500
f
max
(MHz)
960
1000
1000
1000
960
1000
2000
2000
2000
2200
2200
2200
2200
2400
2700
2700
2700
2700
P1dB
(W)
160
160
200
270
300
400
200
270
270
160
200
270
400
200
140
140
200
280
Matching
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
Package
SOT1244C
SOT1244C
SOT1242C
SOT1244C
SOT1242C
SOT1244C
SOT1244C
SOT1242C
SOT1244B
SOT1242C
SOT1242C
Planned
release
Released
Released
Q412
Q412
Q312
Q412
Released
Q412
Q412
Released
Q312
Q312
Q312
Q312
Q412
Q412
Q412
Q412
Description
Gen8 ceramic LDMOS transistor for GSM, WCDMA &
LTE applications
Gen8 ceramic LDMOS transistor for GSM, WCDMA &
LTE applications
Gen8 ceramic LDMOS transistor for GSM, WCDMA &
LTE applications (gull-wing)
Gen8 ceramic LDMOS transistor for GSM, WCDMA &
LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for GSM,
WCDMA & LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for GSM,
WCDMA & LTE applications (gull-wing)
Gen8 ceramic LDMOS transistor for GSM & LTE
applications
Gen8 ceramic LDMOS transistor for GSM & LTE
applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for GSM &
LTE applications (gull-wing)
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications (gull-wing)
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for
WCDMA & LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for
WCDMA & LTE applications
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications (gull-wing)
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications
Gen8 ceramic push-pull LDMOS transistor for
WCDMA & LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for
WCDMA & LTE applications (gull-wing)
Note: All devices are internally matched (I/O)
48
NXP Semiconductors RF Manual 16
th
edition
PHILIPS [ NXP SEMICONDUCTORS ]
