1.7 Aerospace and defense
1.7.1
Microwave products for L- and S-band radar and avionics applications
Application diagram
RF signals
video, timing, bias voltage,
control and data
I-f signals
RF small signal
RF power
PLL VCO
local oscillator
mixer
VGA
MPA
RF POWER BOARD
HPA
ISOLATOR
ANTENNA
DRIVE
duplexer
DISPLAY
AND
CONTROL
WAVEFORM
GENERATOR
control and timing
video
DETECTOR
local oscillator signal
PLL VCO
mixer
IF amplifier
LNA
brb410
Recommended products
Function
Product
f
min
(MHz)
500
1030
1030
2700
2700
3100
400
500
960
960
1030
1030
1200
1200
1200
2700
2700
2900
3100
3100
f
max
(MHz)
1400
1090
1090
3100
3500
3500
1000
1400
1215
1215
1090
1090
1400
1400
1400
3100
2900
3300
3500
3500
P1dB (W)
25
10
2
6
30
20
600
130
250
500
200
600
250
500
250
130
350
150
120
350
VDS (V)
50
36
36
32
32
32
50
50
36
50
28
48
36
50
50
32
32
32
32
32
η
D
(%)
50
40
-
33
50
45
57
50
50
50
65
52
45
50
55
50
50
47
43
43
G
p
(dB)
19
16
16
15
13
15.5
20
17
13.5
17
20
17
15
17
17
12
13.5
13.5
11
10
Package
Type
BLS6G2735L(S)-30
BLS6G3135(S)-20
BLU6H0410L(S)-600P
BLL6H0514L(S)-130
BLL6H1214L(S)-250
BLS6G2731S-130
BLS7G2729L(S)-350P
BLS6G3135(S)-120
BLS7G3135L(S)-350P*
Driver
HPA
Final
* Check status in section 3.1, as this type is not yet released for mass production
Product highlight:
Designed for S-band operation (2.7 to 2.9 GHz), this internally
matched LDMOS power transistor for rader applications delivers an
output power of 350 W and a power gain of 13.5 dB at an efficiency
of 50 %.
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Features
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
Excellent thermal stability
40
NXP Semiconductors RF Manual 16
th
edition
PHILIPS [ NXP SEMICONDUCTORS ]
