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1014-12 参数 Datasheet PDF下载

1014-12图片预览
型号: 1014-12
PDF下载: 下载PDF文件 查看货源
内容描述: RF手册第16版 [RF Manual 16th edition]
分类和应用:
文件页数/大小: 130 页 / 9375 K
品牌: PHILIPS [ NXP SEMICONDUCTORS ]
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3.3
3.3.1
RF Bipolar transistors
Wideband transistors
RF wideband transistor selection guide on www.nxp.com/rftransistors
Easy-to-use parametric filters help you choose the right RF wideband
transistor for your design.
Why choose NXP’s wideband transistors:
st
th
`
Broad portfolio (1 - 7 generation)
`
Short lead time
`
Smallest packages
`
Volume delivery
Wideband transistors
The f
T
-I
C
curve represents transition frequency (f
T
)
characteristics as a function of collector current (I
C
) for the seven
generations of RF wideband transistors. A group of transistors
having the same I
C
and similar f
T
represents a curve. The curve
number matches with products in the selection tables of
this section (third column of each table), detailing their RF
characteristics.
Wideband transistors line-up per frequency
100
(33)
(39)
bra510
(37)
f
T
(GHz)
(35)
(25)
(26)
(27)
(41)
(36)
7th generation
(29)
(32)
(38)
(21)
(15)
(16)
(11)
(12)
(40)
(22)
(23)
6th generation
5th generation
4th generation
10
(34)
(30)
(19)
(20)
(31)
(14)
(18)
(7)
(8)
(4)
(1)
(3)
(9)
(10)
3rd generation
2nd generation
1st generation
1
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
I
C
(mA)
1000
Pin
1
2
3
4
1
2
3
4
Figure 2
1
2
3
4
4
3
3
4
1
2
Figure 1
2
1
Description
Type (Figure 1)
Collector
Base
Emitter
Emitter
Type/X (Figure 1)
Collector
Emitter
Base
Emitter
Type/XR (Figure 2)
Collector
Emitter
Base
Emitter
82
NXP Semiconductors RF Manual 16
th
edition