2.6.2
Completing NXP's RF power transistor offering: products in plastic packages (OMP)
NXP is currently developing a complete line of overmolded plastic (OMP) RF power
transistors and MMICs with peak powers ranging from 3 to 500 W. The main benefit of
plastic packages is cost effectiveness with little or no impact on performance. The range
of plastic devices will complement the extensive range of RF power products that NXP
offers in ceramic packages for all frequency ranges and applications up to 2.45 GHz.
Products in development
`
Single-stage broadband drivers in HSOP-outlines, from
3 to 10 W
`
Single-stage OMP drivers from 25 to 45 W, replacing
their ceramic equivalents for cost-sensitive applications
`
Dual-stage MMICs from 30 to 60 W that can be used as
high-gain drivers or combined as low-power dual-stage
Doherty amplifiers
`
Fully integrated plug-and-play Doherty PAs in a single
package (50 to 100 W)
Some of these products are available for sampling now, while
the rest of the portfolio will be rolled out throughout 2012.
RF power products in plastic packages (OMP)
Type
BLP7G09S-140P(G)
f
min
(MHz)
700
2000
700
900
f
max
(MHz)
2200
2200
900
1000
P1dB
Matching Package
(W)
10
60
140
140
-
I/O
O
O
Description
Gen7 OMP LDMOS transistor for WCDMA & GSM applications
Gen7 LDMOS MMIC for WCDMA applications (gull-wing)
Gen7 OMP push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)
Gen7 OMP push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)
NXP Semiconductors RF Manual 16
th
edition
71
Focus applications,
products & technologies
`
Final transistors in OMP package (SOT502-sized) ranging
from 140 to 200 W in frequency bands from 730 MHz
to 2.2 GHz
`
Final transistors in OMP package (SOT502-sized) ranging
from 3 to 500 W in ISM frequency bands from a few MHz
up to 2.45 GHz
PHILIPS [ NXP SEMICONDUCTORS ]
