MBR1080CT THRU MBR10100CT
Features
•
•
•
•
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
•
•
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +175°C
Maximum
Recurrent
Peak
Reverse
Voltage
MBR1080CT MBR1080CT
80V
MBR10100CT MBR10100CT 100V
Microsemi
Catalog
Number
Device
Marking
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
80V
100V
10 Amp
Schottky Barrier
Rectifier
80-100 Volts
TO-220AB
B
C
K
PIN
1
2
3
L
M
D
A
E
56V
70V
F
G
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
I
F(AV)
I
FSM
10A
120A
T
C
= 100°C
I
J
N
H H
PIN 1
PIN 2
CASE
8.3ms, half sine
PIN 3
V
F
.85V
.75V
I
FM
= 5A
T
J
= 25°C
T
J
= 125°C
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MM
14.22
9.65
2.54
5.84
9.65
------
12.70
2.29
0.51
0.30
3.53
3.56
1.14
2.03
15.88
10.67
3.43
6.86
10.67
6.35
14.73
2.79
1.14
0.64
4.09
4.83
1.40
2.92
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
IR
0.2mA
15mA
300pF
T
J
= 25°C
T
J
= 125°C
Measured at
1.0MHz, V
R
=4.0V
C
J
INCHES
.560
.625
.380
.420
.100
.135
.230
.270
.380
.420
------
.250
.500
.580
.090
.110
.020
.045
.012
.025
.139
.161
.140
.190
.045
.055
.080
.115
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
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PFS [ SHENZHEN PING SHENG ELECTRONICS CO., LTD. ]
