D882 参数 Datasheet PDF下载

D882

TRANSISTOR ( NPN )

TO-126

1. EMITTER

2. COLLECTOR

3. BASE

123

MAXIMUM RATINGS* T

A

=25℃ unless otherwise noted

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

D

T

J

T

stg

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Total Device Dissipation

Junction Temperature

Junction and Storage Temperature

Parameter

Value

40

30

6

3

1.25

150

-55-150

Units

V

V

V

A

W

℃

℃

*These ratings are limiting values above which the serviceability of any semiconductor device may be

impaired.

ELECTRICAL CHARACTERISTICS(Tamb=25℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

h

FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V

CE

(sat)

V

BE

(sat)

f

T

V

CE

=2V, I

C

= 100mA

I

C

=2A,

I

C

=2A,

I

B

= 0.2A

I

B

= 0.2A

I

C

=0.1mA

50

32

0.5

1.5

V

V

MHz

Symbol

V(BR)

CBO

V(BR)

CEO

V(BR)

EBO

I

CBO

I

CEO

I

EBO

h

FE(1)

unless

Test

otherwise

specified)

MIN

40

30

6

1

10

1

60

400

TYP

MAX

UNIT

V

V

V

uA

uA

uA

conditions

Ic=100uA ,I

E

=0

I

C

= 10 mA , I

B

=0

I

E

= 100 mA ,I

C

=0

V

CB

=40 V , I

E

=0

V

CE

=30 V , I

B

=0

V

EB

=6V ,

I

C

=0

V

CE

= 2V, I

C

= 1A

V

CE

=5 V,

f = 10MHz

CLASSIFICATION OF hFE

(1)

Rank

Range

R

60-120

O

100-200

Y

160-320

GR

200-400

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