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CRD13003BC 参数 Datasheet PDF下载

CRD13003BC图片预览
型号: CRD13003BC
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅功率晶体管 [NPN SILICON POWER TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 328 K
品牌: PFS [ SHENZHEN PING SHENG ELECTRONICS CO., LTD. ]
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CRD13003BC
(9AC) (Tin Finish Part)
LEAD FREE
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
I
C
=1mA, I
E
=0
V
CBO
Collector Base Voltage
**V
CEO (sus)
I
C
=10mA, I
B
=0
Collector Emitter (sus) Voltage
I
CBO
V
CB
=700V
,
I
E
=0
Collector Cut Off Current
V
CB
=700V
,
I
E
=0, T
c
=100ºC
I
EBO
V
EB
=9V, I
C
=0
Emitter Cut Off Current
**h
FE
I
C
=0.5A, V
CE
=5V
DC Current Gain
I
C
=2A, V
CE
=5V
Collector Emitter Saturation Voltage
**V
CE (sat)
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1.5A, I
B
=0.5A
I
C
=1A, I
B
=0.25A,T
c
=100ºC
Base Emitter Saturation Voltage
**V
BE (sat)
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1A, I
B
=0.25A, T
c
=100ºC
DYNAMIC CHARACTERISTICS
DESCRIPTION
Current Gain Bandwidth Product
Output Capacitance
SWITCHING TIME
DESCRIPTION
Turn on Time
Fall Time
Storage Time
SYMBOL
t
on
t
f
t
stg
TEST CONDITION
V
CC
=125V
I
B1
=0.2A, I
B2
=0.2A
I
C
=1A
MIN
700
400
-
-
15
4.0
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-
-
1.0
5.0
1.0
22
25
0.5
1.0
2.5
1.0
1.0
1.2
1.1
UNIT
V
V
mA
mA
mA
V
V
V
V
V
V
V
SYMBOL
f
T
C
ob
TEST CONDITION
I
C
=100mA, V
CE
=10V,
f=1MHz
V
CB
=10V, f=0.1MHz
MIN
4.0
-
TYP
-
21
MAX
-
-
UNIT
MHz
pF
MIN
-
-
-
TYP
-
-
-
MAX
1.1
0.7
4.0
UNIT
µs
µs
µs
MARKING
For Lead Free Lead Finish
CRD1
3003
BC
PXYY
'T' stands for Tin finish leads
C = CDIL Logo
P = Plant Code, N for Delhi
X = Year of Manufacturer
YY = Week Code
**Pulse Test:- PW=300µs, Duty Cycle=2%
µ
Web Site:
WWW.PS-PFS.COM