NPN general purpose Transistor
BC846/847/848
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage BC846
80
50
30
65
45
30
6
BC847
V(BR)CBO IC=10μA,IE=0
V
BC848
Collector-emitter breakdown voltage BC846
BC847
BC848
V(BR)CEO IC=10mA,IB=0
V
V
Emitter-base breakdown voltage
Collector cut-off current
BC846
BC847
BC848
BC846
BC847
BC848
V(BR)EBO IE=10μA,IC=0
6
5
VCB=70V,IE=0
ICBO
IEBO
hFE
VCB=50V,IE=0
VCB=30V,IE=0
0.1
0.1
μA
μA
Emitter cut-off current
VEB=5V,IC=0
DC current gain
BC846A,847A,848A
BC846B,847B,848B
BC847C,848C
110
200
420
220
450
800
VCE=5V,IC=2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat) IC=100mA, IB=5mA
VBE(sat) IC=100mA, IB=5mA
0.5
1.1
V
V
VCE=5V, IC= 10mA
Transition frequency
fT
100
MHz
f=100MHz
Website: www.ps-pfs.com
2 of 4
PFS [ SHENZHEN PING SHENG ELECTRONICS CO., LTD. ]
