NPN
general purpose Transistor
BC846/847/848
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown voltage
BC846
BC847
BC848
Symbol Test conditions
MIN
80
50
30
65
45
30
6
6
5
0.1
TYP MAX
UNIT
V
(BR)CBO
I
C
=10μA,I
E
=0
V
Collector-emitter breakdown voltage BC846
BC847
BC848
Emitter-base breakdown voltage
BC846
BC847
BC848
BC846
BC847
BC848
V
(BR)CEO
I
C
=10mA,I
B
=0
V
V
(BR)EBO
I
E
=10μA,I
C
=0
V
CB
=70V,I
E
=0
V
CB
=50V,I
E
=0
V
CB
=30V,I
E
=0
V
EB
=5V,I
C
=0
V
Collector cut-off current
I
CBO
μA
Emitter cut-off current
DC current gain
BC846A,847A,848A
BC846B,847B,848B
BC847C,848C
I
EBO
0.1
110
200
420
220
450
800
0.5
1.1
μA
h
FE
V
CE
=5V,I
C
=2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
I
C
=100mA, I
B
=5mA
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
= 10mA
f=100MHz
V
V
Transition frequency
f
T
100
MHz
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