N-Type Silicon PIN Photodetectors
EVERYTHING
IN A
C30807, C30808, C30809, C30810, C30822, C30831
NEW
LIGHT.
Description
Features
This family of N-type silicon p-i-n
•Broad Range of Photosensitive Surface Areas
2
2
photodiodes is designed for use in a wide
variety of broad band low light level
applications covering the spectral range
from below 400 to over 1100 nm.
0.2 mm to 100 mm
•Low Operating Voltage V = 45V
R
•Anti-Reflection Coated to Enhance Responsivity at 900 nm
•Hermetically-Sealed Packages
•Spectral Response Range 400 to 1100 nm
The different types making up this series
provide a broad choice in photosensitive
areas and in time response
characteristics. Each of the types is
antireflection coated to enhance
responsivity at 900 nm.
Maximum Ratings, Absolute-Maximum Values (All Types)
These characteristics make the devices
highly useful in HeNe and GaAs laser
detection systems and in optical
DC Reverse Operating Voltage VR . . . . . . . . . . . . . . . .100 max. V
Photocurrent Density, jp at 22°C:
2
Average value, continuous operation . . . . . . . . . .5 mA/mm
2
demodulation, data transmission, ranging,
and high-speed switching applications.
Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 mA/mm
Forward Current, IF:
Average value, continuous operation . . . . . . . . . .10 max. mA
Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 max. mA
Ambient Temperature:
Storage, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . .-60 to +100°C
Operating, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40 to +80°C
Soldering (for 5 seconds) . . . . . . . . . . . . . . . . . . . . . . . .200°C
PERKINELMER [ PERKINELMER OPTOELECTRONICS ]
