C30659-1550nm Series
Table 3. Electrical Characteristics at TA=22ºC
Test Conditions: Ambient Temperature, Vamp
=
5 Volts, HV = +VR (see Note 1), RL = 50Ω AC Coupled
1550nm InGaAs APD
Detector Type
C30659-1550-R2A
C30659-1550-R08B
(InGaAs APD C30662E)
(InGaAs APD C30645E)
Min
Typ
0.2
Max
Min
Typ
0.08
0.005
200
Max
Active Diameter
Active Area
mm
mm2
MHz
0.03
50
Bandwidth Range
Temperature Coefficient of VR
for constant Gain
VR for specified responsivity
-
40
0.2
Note 1
-
70
-
40
0.2
Note 1
-
70
V/°C
V
Temperature sensor sensitivity
-1.8
-2.1
-2.4
-1.8
-2.1
-2.4
mV/°C
Responsivity
At 1300nm
At 1550nm
RF (Internal Feedback Resistor)
-
-
-
300
340
68
-
-
-
-
-
-
80
90
18
-
-
-
kV/W
kV/W
k Ω
Noise Equivalent Power (NEP) (note 3)
f - 100 kHz, ∆f = 1.0 Hz
At 1300nm
At 1550nm
Output Spectral Voltage:
-
-
150
130
180
160
-
-
250
220
375
330
fW/√Hz
fW/√Hz
(f = 100 kHz - f-3dB
Output Impedance
System Bandwidth, f-3dB
)
-
45
55
-
20
30
nV/√Hz
33
40
40
50
50
-
33
175
40
200
50
-
Ω
MHz
Rise Time, tr (λ = 900 and 1060nm)
10% to 90% points
Fall Time, tf (λ = 830 and 900nm)
90% to 10% points
-
-
7
7
-
-
-
-
2
2
-
-
ns
ns
ns
V
Recovery time after overload (note 4)
Output Voltage Swing (1kΩ load) (note 5)
Output Voltage Swing (50Ω load) (note 5)
Output Offset Voltage
-
-
150
-
-
-
150
-
2
3
2
3
0.7
-1
-
0.9
-0.3
20
10
-
0.7
-1
-
0.9
-0.3
20
10
-
V
1
1
V
Positive Supply Current (V+)
35
20
35
20
mA
mA
Negative Supply Current (V-)
-
-
Notes: 1. A specific value of VR is supplied with each device. The VR value will be within the specified ranges.
2. If = 0.1 mA, 25°C
3. NEPmax is the Maximum Output Spectral Noise Voltage divided by the typical Responsivity.
4. 0dBm, 250ns pulse.
5. Pulsed operation.
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