PE42552
Product Specification
Figure 3. Pin Configuration (Top View)
CTRL
Vdd
Vss
LS
Table 4. Absolute Maximum Ratings
Symbol
V
DD
V
I
Parameter/Conditions
Power supply voltage
Voltage on any input except for
CTRL and LS inputs
Voltage on CTRL input
Voltage on LS input
Storage temperature range
Input Power:
9 kHz
≤
1 MHz
1 MHz
≤
7.5 GHz
ESD voltage (HBM)
1
ESD voltage (Machine Model)
Min
-0.3
-0.3
Max
4.0
V
DD
+
0.3
4.0
4.0
150
fig. 4,5
30
1000
100
Units
V
V
V
V
°C
dBm
dBm
V
V
16
15
14
GND
RF1
GND
GND
13
1
2
3
4
12
11
10
9
GND
RF2
GND
GND
V
CTRL
V
LS
T
ST
P
IN
V
ESD
-65
5
6
7
GND
GND
GND
RFC
8
Note: 1. Human Body Model (HBM, MIL_STD 883 Method 3015.7)
Table 2. Pin Descriptions
Pin No.
2
1, 3, 4, 5, 6,
8, 9, 10, 12
7
11
13
14
15
16
Pin Name
RF1
GND
RFC
RF2
V
SS
CTRL
LS
V
DD
RF Port 1
Ground
Description
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be restricted to
the limits in the Operating Ranges table. Operation
between operating range maximum and absolute
maximum for extended periods may reduce reliability.
RF Common
RF Port 2
Negative supply voltage or GND
connection (Note 1)
CMOS level:
Logic Select - Used to determine
the definition for the CTRL pin (see
Table 5)
Nominal 3.3 V supply connection
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS™ device, observe the
same precautions that you would use with other ESD-
sensitive devices. Although this device contains
circuitry to protect it from damage due to ESD,
precautions should be taken to avoid exceeding the
rating specified.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
Note: 1. Use VSS (pin 13, VSS = -VDD) to bypass and disable
internal negative voltage generator. Connect VSS (pin 13) to GND
(VSS = 0V) to enable internal negative voltage generator.
Table 3. Operating Ranges
Parameter
V
DD
Positive Power Supply Voltage
V
SS
Negative Power Supply Voltage
(external power supply used)
V
SS
Negative Power Supply Voltage
(internal power supply used)
I
DD
Power Supply Current
(V
SS
= 0V, Temp = +85 °C)
I
SS
Negative Supply
(V
SS
= -V
DD
, Temp = 25 °C)
Control Voltage High
Control Voltage Low
T
OP
Operating temperature range
RF Power In
1
(P
IN
):
9 kHz
≤
1 MHz
1 MHz
≤
7.5 GHz
Table 5. Control Logic Truth Table
Min
3.0
-3.6
-0.1
Typ
3.3
-3.3
0.0
15
-10
Max
3.6
-3.0
0.0
120
-40
Units
V
V
V
µA
µA
V
V
°C
dBm
dBm
LS
0
0
1
1
CTRL
0
1
0
1
RFC-RF1
off
on
on
off
RFC-RF2
on
off
off
on
Logic Select (LS)
The Logic Select feature is used to determine the
definition for the CTRL pin.
0.7xV
DD
0.3xV
DD
-40
25
85
fig. 4,5
30
Spurious Performance
The typical spurious performance of the PE42552 is
-116 dBm when VSS=0V (pin 13 = GND). If further
improvement is desired, the internal negative voltage
generator can be disabled by setting VSS = -VDD.
Switching Frequency
The PE42552 has a maximum 25 kHz switching rate
when the internal negative voltage generator is used
(pin 13=GND). The rate at which the PE42552 can be
switched is only limited to the switching time (Table 1) if
an external negative supply is provided at
(pin13=VSS).
Document No. 70-0246-03
│
UltraCMOS™ RFIC Solutions
Note: 1. Please consult low frequency graphs on page 3 for
recommended operating power level.
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the PE42552 in
the 16-lead 3x3mm QFN package is MSL1.
©2008 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 9
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