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EK-42693-01 参数 Datasheet PDF下载

EK-42693-01图片预览
型号: EK-42693-01
PDF下载: 下载PDF文件 查看货源
内容描述: SP9T的UltraCMOS 2.75 V开关100 - 3000兆赫, 68 dBm的IIP3 [SP9T UltraCMOS 2.75 V Switch 100 - 3000 MHz, +68 dBm IIP3]
分类和应用: 开关
文件页数/大小: 4 页 / 99 K
品牌: PEREGRINE [ PEREGRINE SEMICONDUCTOR CORP. ]
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PE42693
Product Brief
Table 1. Target Electrical Specifications @ +25 °C, V
DD
= 2.75 V
(Z
S
= Z
L
= 50
)
Parameter
TRX - Ant (850 WCDMA)
TRX - Ant (1950 / 2140 WCDMA)
TX - Ant (850 / 900)
TX - Ant (1800 / 1900)
RX - Ant (850 / 900)
RX - Ant (1800 / 1900)
All Ports in On State
TX - RX (850 / 900)
TX - RX (1800 / 1900)
TRX - RX (850 / 900)
TRX - RX (2200)
TX - TRX (850 / 900)
TX - TRX (2200)
TX - TX (850 / 900)
TX - TX (1800 / 1900)
TX 850/900 MHz, +35 dBm output power, 50
TX 1800/1900 MHz, +33 dBm output power, 50
TX 850/900 MHz, +35 dBm output power, 50
TX 1800/1900 MHz, +33 dBm output power, 50
TRX – Measured in a 50
system at 2.14 GHz at the TX1 port. Input signals are referenced to the ANT
port with +20 dBm CW signal at 1.95 GHz and -15 dBm CW signal at 1.76 GHz
TRX – Measured in a 50
system at 2.14 GHz at the TX1 port. Input signals are referenced to the ANT
port with +20 dBm CW signal at 1.95 GHz and -15 dBm CW signal at 1.76 GHz
50% of control to (10/90%) RF
Condition
Typ
0.7
0.8 / 0.9
0.7
0.85
1.1
1.25
20
51
45
43
34
34
28
31
26
-87
-86
-76
-77
-110
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBc
dBc
dBc
dBc
dBm
Insertion Loss
1
Return Loss
Isolation
2nd Harmonic
2
3rd Harmonic
2
WCDMA Band I IMD3
WCDMA Band I IIP3
Switching time
+68
2
dBm
µs
Notes: 1. Insertion loss specified with optimal ANT impedance matching with the outermost ANT bondpad.
2. Pulsed RF input duty cycle of 50% and 4620 µs, measured per 3GPP TS 45.005.
Note: All datasheet parameters are tested and specified using only the antenna pad connection closest to edge of the die. Additional antenna pad
connections have been added to allow customers to select different wirebond lengths which can be used to optimize performance.
Table 2. Operating Ranges
Parameter
Temperature range
V
DD
Supply Voltage
I
DD
Power Supply Current
(V
DD
= 2.6V)
TX input power (VSWR 3:1)
RX input power (VSWR 3:1)
Control Voltage High
Control Voltage Low
3
3
Table 3. Absolute Maximum Ratings
Max Units
+85
2.75
13
3.2
20
+35
+20
1.4
0.4
°C
V
T
ST
Storage temperature range
Operating temperature range
TX input power (50
Ω)
4,5
P
IN
(50
Ω)
TRX input power (50
Ω)
4,5
dBm
V
P
IN
(∞ :1)
V
RX input power (50
Ω)
4,5
TX input power (VSWR
:1)
4,5
TRX input power (VSWR
:1)
4,5
ESD Voltage (HBM, MIL_STD
883 Method 3015.7)
ESD Voltage (MM, JEDEC,
JESD22-A114-B)
-65
-40
+150
+85
+38
+35
+23
+35
dBm
+32
1500
100
V
V
dBm
°C
°C
µA
dBm
T
OP
Symbol Min Typ
T
OP
V
DD
I
DD
P
IN
P
IN
V
IH
V
IL
-40
2.65
Symbol
V
DD
V
I
Parameter/Conditions
Power supply voltage
Voltage on any DC input
Min
-0.3
-0.3
Max
4.0
V
DD
+ 0.3
Units
V
V
Note: 3. Pulsed RF input duty cycle of 50% and 4620 µs,
measured per 3GPP TS 45.005.
V
ESD
Part performance is not guaranteed under these
conditions. Exposure to absolute maximum conditions
for extended periods of time may adversely affect
reliability. Stresses in excess of absolute maximum
ratings may cause permanent damage.
©2007 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 4
Notes: 4. Pulsed RF input duty cycle of 50% and 4620 µs, measured
per 3GPP TS 45.005.
5. V
DD
within operating range specified in Table 2.
Document No. 70-0231-01
UltraCMOS™ RFIC Solutions
Contact sales@psemi.com for full version of datasheet