PE4230
Product Specification
Figure 3. Pin Configuration (Top View)
V
DD
CTRL
GND
1
2
8
7
RF1
GND
GND
RF2
Table 4. Absolute Maximum Ratings
Symbol
V
DD
V
I
Parameter/Conditions
Power supply voltage
Voltage on any input
except for the CTRL input
Voltage on CTRL input
Storage temperature range
Operating temperature
range
Input power (50Ω)
ESD voltage (Human Body
Model)
Min
-0.3
-0.3
Max
4.0
V
DD
+
0.3
5.0
150
85
35
250
Units
V
V
V
°C
°C
dBm
V
4230
3
4
6
5
V
CTRL
T
ST
T
OP
-65
-40
RFC
P
IN
V
ESD
Table 2. Pin Descriptions
Pin
No.
1
2
Pin
Name
V
DD
CTRL
Description
Nominal +3V supply connection.
CMOS or TTL logic level:
High = RFC to RF1 signal path
Low = RFC to RF2 signal path
Ground connection. Traces should be
physically short and connected to ground
plane for best performance.
Common RF port for switch.
1
RF2 port.
1
Ground Connection. Traces should be
physically short and connected to ground
plane for best performance.
Ground Connection. Traces should be
physically short and connected to ground
plane for best performance.
RF1 port.
1
Absolute Maximum Ratings are those values
listed in the above table. Exceeding these values
may cause permanent device damage.
Functional operation should be restricted to the
limits in the DC Electrical Specifications table.
Exposure to absolute maximum ratings for
extended periods may affect device reliability.
Table 5. Control Logic Truth Table
Control Voltage
CTRL = CMOS or TTL High
CTRL = CMOS or TTL Low
3
GND
Signal Path
RFC to RF1
RFC to RF2
4
5
6
RFC
RF2
GND
7
GND
8
RF1
Note 1: All RF pins must be DC blocked with an external
series capacitor or held at 0 V
DC
.
The control logic input pin (CTRL) is typically
driven by a 3-volt CMOS logic level signal, and
has a threshold of 50% of V
DD
. For flexibility to
support systems that have 5-volt control logic driv-
ers, the control logic input has been designed to
handle a 5-volt logic HIGH signal. (A minimal cur-
rent will be sourced out of the V
DD
pin when the
control logic input voltage level exceeds V
DD
.)
Latch-Up Avoidance
Table 3. DC Electrical Specifications
Parameter
V
DD
Power Supply Voltage
I
DD
Power Supply Current
(V
DD
= 3V, V
CNTL
= 3V)
Control Voltage High
Control Voltage Low
0.7xV
DD
0.3xV
DD
Min
2.7
Typ
3.0
29
Max
3.3
35
Units
V
µA
V
V
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS™ device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the rating specified in Table 4.
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 7
Document No. 70-0029-02
│
UltraCMOS™ RFIC Solutions
PEREGRINE [ PEREGRINE SEMICONDUCTOR CORP. ]
