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4125-22 参数 Datasheet PDF下载

4125-22图片预览
型号: 4125-22
PDF下载: 下载PDF文件 查看货源
内容描述: 高线性四MOSFET混频器适用于GSM 800和蜂窝基站 [High Linearity Quad MOSFET Mixer for GSM 800 & Cellular BTS]
分类和应用: GSM蜂窝
文件页数/大小: 8 页 / 234 K
品牌: PSEMI [ Peregrine Semiconductor ]
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PE4125  
Product Specification  
Figure 3. Pin Configuration (Top View)  
Table 3. Absolute Maximum Ratings  
Symbol  
Parameter/Conditions Min Max Units  
TST  
Storage temperature range  
-65  
-40  
150  
85  
°C  
°C  
1
2
3
8
7
6
5
GND  
IF1  
LO  
GND  
RF  
Operating temperature  
range  
TOP  
PLO  
PRF  
LO input power  
20  
12  
dBm  
dBm  
V
RF input power  
IF2  
VESD  
ESD Sensitive Device  
250  
4
GND  
GND  
Absolute Maximum Ratings are those values  
listed in the above table. Exceeding these values  
may cause permanent device damage.  
Functional operation should be restricted to the  
limits in the DC Electrical Specifications table.  
Exposure to absolute maximum ratings for  
extended periods may affect device reliability.  
PE4125  
Table 2. Pin Descriptions  
Pin  
No.  
Pin  
Name  
Description  
1
2
LO  
LO Input  
Ground connection for Mixer. Traces  
Electrostatic Discharge (ESD) Precautions  
should be physically short and connect  
immediately to ground plane for best  
performance.  
GND  
When handling this UltraCMOS™ device, observe  
the same precautions that you would use with  
other ESD-sensitive devices. Although this device  
contains circuitry to protect it from damage due to  
ESD, precautions should be taken to avoid  
exceeding the rating specified.  
3
4
5
6
7
8
RF  
GND  
GND  
IF2  
RF Input  
Ground.  
Ground.  
IF differential output  
IF differential output  
Ground.  
Latch-Up Avoidance  
IF1  
Unlike conventional CMOS devices, UltraCMOS™  
devices are immune to latch-up.  
GND  
©2006 Peregrine Semiconductor Corp. All rights reserved.  
Document No. 70-0044-05 UltraCMOS™ RFIC Solutions  
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