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4122-21 参数 Datasheet PDF下载

4122-21图片预览
型号: 4122-21
PDF下载: 下载PDF文件 查看货源
内容描述: 的UltraCMOS ?高线性四MOSFET混频器对于PCS和3G基站 [UltraCMOS? High Linearity Quad MOSFET Mixer For PCS & 3G BTS]
分类和应用: 过程控制系统PCS
文件页数/大小: 8 页 / 260 K
品牌: PSEMI [ Peregrine Semiconductor ]
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PE4122  
Product Specification  
Figure 3. Pin Configuration (Top View)  
Table 3. Absolute Maximum Ratings  
Symbol  
Parameter/Conditions Min Max Units  
1
2
3
8
7
6
5
GND  
IF1  
LO  
GND  
RF  
TST  
Storage temperature range  
-65  
-40  
150  
85  
°C  
°C  
Operating temperature  
range  
TOP  
PLO  
LO input power  
20  
dBm  
dBm  
V
IF2  
PRF  
RF input power  
16  
VESD  
ESD Sensitive Device  
250  
4
GND  
GND  
PE4122  
Absolute Maximum Ratings are those values  
listed in the above table. Exceeding these values  
may cause permanent device damage.  
Table 2. Pin Descriptions  
Functional operation should be restricted to the  
limits in the DC Electrical Specifications table.  
Exposure to absolute maximum ratings for  
extended periods may affect device reliability.  
Pin  
No.  
Pin  
Name  
Description  
1
2
LO  
LO Input  
Ground connection for Mixer. Traces  
should be physically short and connect  
immediately to ground plane for best  
performance.  
GND  
Electrostatic Discharge (ESD) Precautions  
When handling this UltraCMOS™ device, observe  
the same precautions that you would use with  
other ESD-sensitive devices. Although this device  
contains circuitry to protect it from damage due to  
ESD, precautions should be taken to avoid  
exceeding the rating specified.  
3
4
5
6
7
8
RF  
GND  
GND  
IF2  
RF Input  
Ground.  
Ground.  
IF differential output  
IF differential output  
Ground.  
IF1  
Latch-Up Avoidance  
GND  
Unlike conventional CMOS devices, UltraCMOS™  
devices are immune to latch-up.  
©2006 Peregrine Semiconductor Corp. All rights reserved.  
Document No. 70-0041-04 UltraCMOS™ RFIC Solutions  
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