MMBT5401
THERMALCHARACTERISTICS
CHARACTERISTIC
SYMBOL
MAX
225
UNITS
mW
Total Device Dissipation
FR-4 Board (Note 1)
P
D
TA
=25oC
Derate Above 25oC
1.8
556
300
mW/oC
oC/W
mW
Thermal Resistance,
Junction-to-Ambient
RΘJA
Total Device Dissipation
Alumina Substrate (Note 2)
P
D
TA
=25oC
Derate Above 25oC
2.4
mW/oC
oC/W
Thermal Resistance
Junction-to-Ambient
RΘJA
417
Junction and Storage Temperature
TJ
,TSTG
-55 to +150
oC
1.FR-4 = 70 X 60 X 1mm
2.Alumina = 0.4 X 0.3 X 0.024 in 99.5% alumina
ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted)
CHARACTERISTIC
SYMBOL
MIN
MAX
UNITS
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR
)
CEO
-150
-160
-5.0
-
-
-
Vdc
Vdc
Vdc
(I
Collector-Base Breakdown Voltage
(I =-100µAdc,I =0)
Emitter-Base Breakdown Voltage
(I =-10µAdc,I =0)
Collector Cutoff Current
C=-1.0mAdc,I B=0)
V(BR
)
CBO
C
E
V(BR
)
EBO
E
C
nAdc
µAdc
(VCB=-120Vdc, I
(VCB=-120Vdc, I
E
=0)
=0, T
I
CES
-
-
-50
-50
E
A
=100oC)
ON CHARACTERISTICS
DC Current Gain
(I
(I
(I
C
C
C
=-1.0mAdc, VCE=-5.0Vdc)
=-10mAdc, VCE=-5.0Vdc)
=-50mAdc, VCE=-5.0Vdc)
50
60
50
-
240
-
hFE
-
Collector-Emitter Saturation Voltage
(I
(I
C
=-10mAdc, I
=-50mAdc, I
B
=-1.0mAdc)
=-5.0mAdc)
V
V
CE(SAT)
BE(SAT)
-
-
-0.2
-0.5
Vdc
Vdc
C
B
Base-Emitter Saturation Voltage
(I
(I
-
-
-1.0
-1.0
C
=-10mAdc, I
=-50mAdc, I
B
=-1.0mAdc)
=-5.0mAdc)
C
B
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
f
T
100
300
6.0
MHz
pF
-
(I
Output Capacitance
(VCB=-10Vdc, I =0, f=1.0MHz)
Small Signal Current Gain
(I =-1.0mAdc, VCE=-10Vdc, f=1.0kHz)
Noise Figure
(I =-200µAdc, VCE=-5.0Vdc, Rs=10Ω, f=1.0kHz)
C=-10mAdc, VCE=-10Vdc, f=100MHz)
C
OBO
-
40
-
E
hFE
200
8.0
C
NF
dB
C
REV.0.0-OCT.20.2008
PAGE . 2
PANJIT [ PAN JIT INTERNATIONAL INC. ]
