MMBT4403
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
PNP epitaxial silicon, planar design
Collector-emitter voltage V
CE
= -40V
Collector current I
C
=-600mA
Complimentary (NPN) device: MMBT4401
40V
POWER
225mW
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-23
Terminals: Solderable per MIL-STD-750, Method 2026
Approx Weight: 0.008 grams
Marking: M3A
Top View
3
Collector
1
BASE
3
COLLECTOR
1
Base
2
Emitter
2
EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Collector - Emitter Voltage
Collector - Base Voltage
Emitter – Base Voltage
Collector Current - Continuous
Max Power Dissipation (Note 1)
Junction and Storage Temperature Range
V
CEO
V
CBO
V
EBO
I
C
P
TOT
T
J
, T
STG
-40
-40
-5.0
-600
225
-55 to 150
V
V
V
mA
mW
℃
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Thermal Resistance , Junction to Ambient (Note 1)
R
θJ A
556
℃/W
Note 1: Transistor mounted on FR-4 board
70
x
60
x
1mm.
using minimum recommended pad.
REV.0.1-MAR.5.2009
PAGE . 1
PANJIT [ PAN JIT INTERNATIONAL INC. ]
