MMBT4403
ELECTRICAL CHARACTERISTICS (TJ = 25˚C, unless otherwise noted)
PARAMETER
SYMBOL
Test Condition
MIN.
-40
-40
-5.0
-
TYP.
MAX.
UNIT
V
Collector - Emitter Breakdown Voltage
Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Base Cutoff Current
V(BR)CE0 IC=-1.0mA, IB=0
V(BR)CB0 IC=-100uA, IE=0
V(BR)EB0 IE=-100uA, IC=0
-
-
-
-
-
-
-
V
-
V
IBEV
ICEX
VCE=-35V, VEB=-0.4V
VCE=-35V, VEB=-0.4V
-100
-100
nA
nA
Collector Cutoff Current
-
IC=-0.1mA, VCE=-1.0V
IC=-1.0mA, VCE=-1.0V
IC=-10mA, VCE=-1.0V
IC=-150mA, VCE=-2.0V
IC=-500mA, VCE=-2.0V
IC=-150mA, IB=-15 mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-20mA, VCE=-10V,
f=100MHz
30
60
100
100
20
-
-
-
-
-
-
-
-
-
-
-
-
DC Current Gain
hFE
-
-
300
-
-0.4
-0.75
-0.95
-1.3
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Current-Gain – Bandwidth Product
VCE(SAT)
VBE(SAT)
fT
V
V
-
-0.75
-
200
-
-
MHz
CCBO
Collector - Base Capacitance
Emitter - Base Capacitance
Delay Time
VCB=-5.0V, IE=0, f=1MHz
-
-
-
-
-
-
-
-
-
-
-
-
8.5
30
pF
pF
ns
ns
ns
ns
CEBO
VCB=-0.5V, IC=0, f=1MHz
td
tr
ts
tf
15
VCC=-30V, VBE=-2.0V,
IC=-150mA, IB1=-15mA
Rise Time
20
Storage Time
225
30
VCC=-30V, IC=-150mA,
IB1=IB2=15mA
Fall Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
-30V
-30V
200Ω
200Ω
<20ns
+14V
< 2ns
1.0KΩ
1.0KΩ
+2V
CS < 10pF
0
0
CS < 10pF
1N916
1N916
-16V
-16V
+4V
10 to 100ns
1 to 100us
Duty Cycle ~ 2.0%
Duty Cycle = 2.0%
Fig. 1. Turn-On Time
Fig. 2. Turn-Off Time
PANJIT [ PAN JIT INTERNATIONAL INC. ]
