DATA SHEET
MMBT3904
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
• NPN epitaxial silicon, planar design
• Collector-emitter voltage VCE = 40V
.056(1.40)
.119(3.00)
.110(2.80)
40 Volts
POWER
225 mWatts
SOT- 23
Unit: inch (mm)
environment substance directive request
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-202G, Method 208
Approx. Weight: 0.008 gram
Marking: S1A
Top View
3
Collector
1
BASE
3
COLLECTOR
.083(2.10)
.066(1.70)
.006(.15)
.002(.05)
.006(.15)MAX
.020(.50)
.013(.35)
1
Base
2
Emitter
2
EMITTER
ABSOLUTE RATINGS
PA R A M E TE R
C ol ct r-E m it rVolage
l o
e
te
t
C ol ct r-B ase Volage
l o
e
t
E m it r-B ase Volage
te
t
C ol ct rC urent-C ontnuous
l o
e
r
i
S ym bol
V
C EO
V
C BO
V
EBO
I
C
Val e
u
40
60
6.0
.044(1.10)
.035(0.90)
.103(2.60)
.086(2.20)
• Collector current IC = 200mA
• Pb free product are available :
99% Sn above can meet Rohs
.047(1.20)
.007(.20)MIN
U nis
t
V
V
V
mA
200
THERMAL CHARACTERISTICS
PA R A M E TE R
M ax P ow erD i si aton ( ot 1)
s p i
N e
Ther alR esi t nce ,Juncton t A m bi nt
m
sa
i o
e
Juncton Tem per t r
i
aue
S t r ge Tem per t r
oa
aue
S ym bol
P
TO T
Rθ
JA
T
J
STG
TI
Val e
u
225
556
- 5 t 150
5 o
- 5 t 150
5 o
U nis
t
mW
O
C/
W
O
C
C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
STAD-NOV.26.2004
PAGE . 1
PANJIT [ PAN JIT INTERNATIONAL INC. ]
