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BSS84_1 参数 Datasheet PDF下载

BSS84_1图片预览
型号: BSS84_1
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 139 K
品牌: PANJIT [ PAN JIT INTERNATIONAL INC. ]
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BSS84
P-CHANNEL ENHANCEMENT MODE MOSFET
This is a P-channel, enhancement-mode MOSFET, housed in the industry-
standard, SOT-23 package. This device is ideal for portable applications
where board space is at a premium.
SOT- 23
3
FEATURES
Low On-Resistance
Low Gate Threshold Voltage
Fast Switching
Available in lead-free plating (100% matte tin finish)
1
Drain
3
2
APPLICATIONS
Switching Power Supplies
Hand-Held Computers, PDAs
1
Gate
2
Source
MARKING CODE: 84L
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current
Total Power Dissipation (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
Note 1. R
GS
< 20K ohms
T
J
= 25°C Unless otherwise noted
Symbol
V
DSS
V
DGR
V
GSS
I
D
P
D
T
J
T
stg
Value
- 50
- 50
± 20
130
200
-55 to +150
-55 to +150
Units
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient (Note 2)
Symbol
R
thja
Value
625
Units
°C/W
Note 2. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout
8/12/2005
Page 1
www.panjit.com