BSS138
50V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@500mA=3Ω
• R
DS(ON)
, V
GS
@2.5V,I
DS
@100mA=6Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected
• In compliance with EU RoHS 2002/95/EC directives
0.079(2.00)
0.070(1.80)
0.008(0.20)
0.003(0.08)
0.056(1.40)
0.047(1.20)
0.120(3.04)
0.110(2.80)
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 138
• Apporx. Weight: 0.0003 ounce, 0.0084 gram
0.004(0.10)MAX.
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
Maximum Ratings and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo lta g e
Ga te - S o ur c e Vo lta g e
C o nti nuo us D r a i n C ur r e nt
P uls e d D r a i n C ur r e nt
1)
S ym b o l
V
DS
V
GS
I
D
I
D M
P
D
T
J
,T
S TG
R
θJ
A
L i mi t
50
+20
300
2000
350
210
- 5 5 to + 1 5 0
357
0.006(0.15)MIN.
• R
DS(ON)
, V
GS
@4.5V,I
DS
@200mA=4Ω
Uni ts
V
V
mA
mA
mW
O
T
A
= 2 5
O
C
T
A
= 7 5
O
C
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e
Ra ng e
M a xi m um P o we r D i s s i p a ti o n
Junction-to Ambient Thermal Resistance(PCB mounted)
2
C
O
C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
October 26,2010-REV.00
PAGE . 1
PANJIT [ PAN JIT INTERNATIONAL INC. ]
