BC847BS
NPN GENERAL PURPOSE DUAL TRANSIS-
VOLTAGE
FEATURES
• General purpose amplifier applications
• PNP epitaxial silicon, planar design
• In compliance with EU RoHS 2002/95/EC directives
45 Volts
POWER
150 mWatts
MECHANICAL DATA
• Case: SOT-363, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.008 gram
• Marking : 47S
ABSOLUTE MAXIMUM RATINGS
PARAMETER
C ollector - Emi tter Voltage
C ollector - Base Voltage
Emi tter - Base Voltage
C ollector C urrent - C onti nuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
6.0
100
Uni ts
V
V
V
mA
THERMAL CHARACTERISTICS
PARAMETER
Total Device Dissipation
Per Device FR-5 Board (Note 1)T
A
=25
O
C
Derate above 25
O
C
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
P
D
R
θ
JA
T
J
T
STG
Value
300
150
3.0
328
-55 to 150
-55 to 150
Units
mW
mW/
O
C
O
C/W
O
C
C
O
Note 1: FR-4 board 70 x 60 x 1mm.
REV.0.1-MAR.9.2009
PAGE . 1
PANJIT [ PAN JIT INTERNATIONAL INC. ]
