BC817 SERIES
o
ELECTRICAL CHARACTERISTICS(TJ=25 C,unless otherwise notes)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage (Ic=10mA, IB=0)
Collector-Base Breakdown Voltage (VEB=0V, Ic=10μA
Emitter-Base Breakdown Voltage (IE=1μA,Ic=0)
Emitter-Base Cutoff Current (VEB=5V)
V(BR)CEO
V(BR)CBO
V(BR)EBO
IEBO
45
50
5.0
-
-
-
-
-
-
V
V
-
-
V
100
nA
nA
Collector-Base Cutoff Current (VCB=20V,IE=0)
100
5.0
-
-
ICBO
-
TJ =150oC
μA
-
-
-
BC817-16
BC817-25
BC817-40
100
160
250
250
400
600
DC Current Gain
(Ic=100mA,VCE=1V)
hFE
-
40
-
-
(Ic=500mA,VCE=1V)
Collector-Emitter Saturation Voltage (Ic=500mA ,IB=50mA)
Base-Emitte Voltage (Ic=500mA,VCE=1.0V)
VCE(SAT)
VBE(ON)
CCBO
fT
-
-
-
0.7
1.2
-
V
V
-
-
Collector-Base Capacitance (VCB=10V,IE=0,f=1MHz)
Current Gain-Bandwidth Product (Ic=10mA,VCE=5V,f=100MHz)
7.0
-
pF
MHz
100
-
ELECTRICAL CHARACTERISTICS CURVES
450
300
250
200
400
350
300
250
200
150
100
50
150
100
50
V
= 1V
CE
V
= 1V
CE
0
0
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
Collector Current, I (m A)
Collector Current, I (m A)
C
C
Fig. 1. BC817-16 Typical hFE vs. IC
Fig. 2. BC817-25 Typical hFE vs. IC
100
10
1
700
600
500
400
300
200
100
0
CIB (EB)
COB(EB)
VCE = 1V
0.01
0.1
1
10
100
1000
0.1
1
10
100
Collector Current, IC (m A)
Reverse Voltage, V (V)
R
Fig. 3 BC817-40 Typical hFE vs. IC
January 05,2011-REV.01
Fig. 4 Typical Capacitances
PAGE . 2
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