UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
晶体管具有内置电阻511D / 511E / 511F / 511H / 511L / 511M / 511N / 511T / 511V / 511Z
s
电气特性
参数
收藏家Cuto FF电流
UN5111
UN5112/5114/511E/511D/511M/511N/511T
UN5113
辐射源
截止
当前
UN5115/5116/5117/5110
UN511F/511H
UN5119
UN5118/511L/511V
UN511Z
集电极 - 基极电压
UN511N/511T/511V/511Z
集电极到发射极电压
UN511N/511T
UN5111
UN5112/511E
UN5113/5114/511M
前锋
当前
转让
比
UN5115*/5116*/5117*/5110*
UN511F/511D/5119/511H
UN5118/511L
UN511N/511T
UN511V
UN511Z
集电极到发射极饱和电压
UN511V
输出电压较高水平
输出电压低的水平
UN5113
UN511D
UN511E
跃迁频率
UN511Z
UN5111/5114/5115
UN5112/5117/511T
UN5113/5110/511D/511E
输入
电阻
tance
UN5116/511F/511L/511N/511Z
UN5118
UN5119
UN511H/511M/511V
(Ta=25˚C)
符号
I
CBO
I
首席执行官
条件
V
CB
= -50V ，我
E
= 0
V
CE
= -50V ，我
B
= 0
民
典型值
最大
– 0.1
– 0.5
– 0.5
– 0.2
– 0.1
I
EBO
V
EB
= -6V ，我
C
= 0
– 0.01
–1.0
–1.5
–2.0
– 0.4
V
CBO
V
首席执行官
I
C
= -10μA ，我
E
= 0
I
C
= -2mA ，我
B
= 0
–50
–50
–50
–50
35
60
80
160
h
FE
V
CE
= -10V ，我
C
= -5mA
30
20
80
6
60
V
CE （ SAT ）
V
OH
I
C
= -10mA ，我
B
= - 0.3毫安
I
C
= -10mA ，我
B
= -1.5mA
V
CC
= –5V, V
B
= - 0.5V ，R
L
= 1kΩ
V
CC
= –5V, V
B
= -2.5V ，R
L
= 1kΩ
V
OL
V
CC
= –5V, V
B
= -3.5V ，R
L
= 1kΩ
V
CC
= –5V, V
B
= ± 10V ，R
L
= 1kΩ
V
CC
= –5V, V
B
= -6V ，R
L
= 1kΩ
f
T
V
CB
= -10V ，我
E
= 1mA时， F = 200MHz的
V
CB
= -10V ，我
E
= 1mA时， F = 200MHz的
80
150
10
22
47
R
1
(–30%)
4.7
0.51
1
2.2
(+30%)
kΩ
–4.9
– 0.2
– 0.2
– 0.2
– 0.2
兆赫
V
400
20
200
– 0.25
– 0.25
V
V
460
V
mA
单位
µA
µA
V
* h
FE
等级分类（ UN5115 / 5116 /五千一百十分之五千一百一十七）
秩
h
FE
Q
160至260
R
210〜 340
S
290〜 460
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
