晶体管
P
C
- TA
1.2
–1.2
印刷circut板:铜
为1cm箔领域
2
或更多,并且
的1.7毫米板厚度
对于集电部。
Ta=25˚C
–1.0
2SA1890
I
C
— V
CE
集电极到发射极饱和电压V
CE ( SAT )
(V)
–100
–30
–10
–3
–1
Ta=75˚C
25˚C
–25˚C
V
CE ( SAT )
— I
C
I
C
/I
B
=10
集电极耗散功率P
C
(W)
1.0
0.8
集电极电流I
C
(A)
I
B
=–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
– 0.8
0.6
– 0.6
0.4
– 0.4
–1mA
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
0.2
– 0.2
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–1
–3
–10
环境温度Ta (C )
集电极到发射极电压V
CE
(V)
集电极电流I
C
(A)
V
BE ( SAT )
— I
C
集电极到发射极饱和电压V
CE ( SAT )
(V)
–100
–30
–10
–3
–1
Ta=–25˚C
25˚C
–75˚C
I
C
/I
B
=10
300
h
FE
— I
C
200
V
CE
=–2V
180
250
Ta=75˚C
25˚C
150
–25˚C
100
f
T
— I
E
V
CB
=–10V
Ta=25˚C
正向电流传输比H
FE
过渡频率f
T
(兆赫)
–1
–3
–10
160
140
120
100
80
60
40
20
200
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
50
–1
–3
–10
0
– 0.01 – 0.03 – 0.1 – 0.3
0
1
3
10
30
100
集电极电流I
C
(A)
集电极电流I
C
(A)
发射极电流I
E
(MA )
C
ob
— V
CB
12
集电极输出电容C
ob
(PF )
10
I
E
=0
f=1MHz
Ta=25˚C
8
6
4
2
0
1
3
10
30
100
300
1000
集电极基极电压V
CB
(V)
2