This product complies with the RoHS Directive (EU 2002/95/EC).
2SK3892
Electrical Characteristics (continued)
T
C
= 25°C±3°C
Parameter
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Gate charge load
Gate-source charge
Gate-drain charge
Thermal resistance (ch-c)
Thermal resistance (ch-a)
Symbol
V
DSF
t
rr
Q
rr
Q
g
Q
gs
Q
gd
R
th(ch-c)
R
th(ch-a)
V
DD
= 100 V, I
D
= 11.0 A, V
GS
= 10 V
Conditions
I
DR
= 22 A, V
GS
= 0
L = 230
mH,
V
DD
= 100 V
I
DR
= 11.0 A, d
i
/ d
t
= 100 A/ms
127
756
50
12
18
3.13
62.5
Min
Typ
Max
-1.5
Unit
V
ns
nC
nC
nC
nC
°C/W
°C/W
2
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Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.