Composite Transistors
XP4311
(Ta=25˚C)
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
f
T
R
1
R
1
/R
2
Conditions
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 6V, I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 10mA, I
B
= 0.3mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 2.5V, R
L
= 1kΩ
V
CB
= 10V, I
E
= –1mA, f = 200MHz
–30%
0.8
150
10
1.0
+30%
1.2
4.9
0.2
35
0.25
V
V
V
MHz
kΩ
min
50
50
0.1
0.5
0.5
typ
max
Unit
V
V
µA
µA
mA
s
Electrical Characteristics
q
Tr1
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
Resistance ratio
q
Tr2
Parameter
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
f
T
R
1
R
1
/R
2
Conditions
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
V
EB
= –6V, I
C
= 0
V
CE
= –10V, I
C
= –5mA
I
C
= –10mA, I
B
= – 0.3mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –2.5V, R
L
= 1kΩ
V
CB
= –10V, I
E
= 1mA, f = 200MHz
–30%
0.8
80
10
1.0
+30%
1.2
–4.9
– 0.2
35
– 0.25
V
V
V
MHz
kΩ
min
–50
–50
– 0.1
– 0.5
– 0.5
typ
max
Unit
V
V
µA
µA
mA
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
Resistance ratio
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
