XP01501
P
T
T
a
250
60
I
C
V
CE
T
a
=
25°C
I
B
=
160
µA
240
V
CE
=
10 V
T
a
=
25°C
200
I
C
I
B
Total power dissipation P
T
(mW)
50
Collector current I
C
(mA)
Collector current I
C
(mA)
200
140
µA
40
120
µA
100
µA
30
80
µA
20
60
µA
40
µA
10
20
µA
160
150
120
100
80
50
40
0
0
0
40
80
120
160
0
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base current I
B
(mA)
I
B
V
BE
1.2
V
CE
=
10 V
T
a
=
25°C
1.0
240
I
C
V
BE
V
CE
=
10 V
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
2
I
C
/ I
B
=
10
200
Collector current I
C
(mA)
Base current I
B
(mA)
10
0.8
160
25°C
T
a
=
75°C
−25°C
0.6
120
1
0.4
80
10
−1
25°C
−25°C
T
a
=
75°C
0.2
40
0
0
0.2
0.4
0.6
0.8
1.0
0
0
0.4
0.8
1.2
1.6
2.0
10
−2
10
−1
1
10
10
2
Base-emitter voltage V
BE
(V)
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
h
FE
I
C
600
V
CE
=
10 V
f
T
I
E
300
V
CB
=
10 V
T
a
=
25°C
240
NV
I
C
V
CE
=
10 V
G
V
=
80 dB
200 Function
=
FLAT
T
a
=
25°C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
500
240
400
T
a
=
75°C
25°C
Noise voltage NV (mV)
160
R
g
=
100 kΩ
180
300
−25°C
120
120
200
80
22 kΩ
4.7 kΩ
100
60
40
0
10
−1
1
10
10
2
0
−10
−1
–1
–10
–10
2
0
10
10
2
10
3
Collector current I
C
(mA)
Emitter current I
E
(mA)
Collector current I
C
(
µA
)
2
SJJ00146BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
