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XN4504 参数 Datasheet PDF下载

XN4504图片预览
型号: XN4504
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面晶体管 [Silicon NPN epitaxial planer transistor]
分类和应用: 晶体小信号双极晶体管光电二极管放大器
文件页数/大小: 2 页 / 37 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号XN4504的Datasheet PDF文件第2页  
Composite Transistors
XN4504
Silicon NPN epitaxial planer transistor
Unit: mm
For amplification of low frequency output
0.65±0.15
+0.2
2.8
–0.3
1.5
–0.05
6
+0.25
0.65±0.15
1
0.3
–0.05
0.5
–0.05
0.95
2.9
–0.05
q
q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
5
2
0.95
4
3
q
2SD1328
×
2 elements
1.1
–0.1
0.4±0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
25
20
12
0.5
1
300
150
–55 to +150
Unit
V
V
V
A
A
mW
˚C
˚C
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol:
5X
Internal Connection
6
5
4
Tr1
1
2
3
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON Resistance
*1
*2
(Ta=25˚C)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on*2
1kΩ
I
B
=1mA
f=1kHz
V=0.3V
Conditions
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 25V, I
E
= 0
V
CE
= 2V, I
C
= 500mA
*1
V
CE
= 2V, I
C
= 1A
*1
I
C
= 500mA, I
B
= 20mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
25
20
12
typ
0 to 0.05
0.1 to 0.3
0.8
max
0.16
–0.06
+0.2
s
Basic Part Number of Element
+0.1
1.45±0.1
s
Features
+0.1
+0.1
Unit
V
V
V
µA
0.1
200
60
0.13
0.4
1.2
200
10
1.0
800
V
V
MHz
pF
Pulse measurement
R
on
test circuit
V
B
V
V
V
A
R
on
=
V
B
!1000(Ω)
V
A
–V
B
1