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XN4402 参数 Datasheet PDF下载

XN4402图片预览
型号: XN4402
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面晶体管 [Silicon PNP epitaxial planer transistor]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 89 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号XN4402的Datasheet PDF文件第2页浏览型号XN4402的Datasheet PDF文件第3页  
Composite Transistors
XN04402
(XN4402)
Silicon PNP epitaxial planar type
Unit: mm
For general amplification
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
4
2.90
+0.20
–0.05
1.9
±0.1
(0.95) (0.95)
5
6
0.16
+0.10
–0.06
1.50
+0.25
–0.05
2.8
+0.2
–0.3
3
2
1
0.30
+0.10
–0.05
Basic Part Number
2SB0710 (2SB710)
×
2
0.50
+0.10
–0.05
10˚
1.1
+0.2
–0.1
(0.65)
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
−60
−50
−5
−500
−1
300
150
−55
to
+150
Unit
V
V
V
mA
A
mW
°C
°C
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
0 to 0.1
Marking Symbol: OH
Internal Connection
4
5
6
Tr2
1.1
+0.3
–0.1
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Tr1
3
2
1
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
*
Base-emitter saturation voltage
*
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −20
V, I
E
=
0
V
CE
= −10
V, I
C
= −150
mA
V
CE
= −10
V, I
C
= −500
mA
I
C
= −300
mA, I
B
= −30
mA
I
C
= −300
mA, I
B
= −30
mA
V
CB
= −10
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
85
40
0.35
0.60
−1.1
200
6
15
−1.5
V
V
MHz
pF
Min
−60
−50
−5
0.1
340
Typ
Max
Unit
V
V
V
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00072BED
0.4
±0.2
1