Composite Transistors
XN4401
Silicon PNP epitaxial planer transistor
Unit: mm
For general amplification
0.65±0.15
6
0.95
+0.2
2.8
–0.3
1.5
–0.05
+0.25
0.65±0.15
1
0.3
–0.05
2.9
–0.05
q
q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
5
2
0.95
4
3
q
2SB709A
×
2 elements
1.1
–0.1
0.4±0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
–60
–50
–7
–100
–200
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol:
5K
Internal Connection
6
5
4
Tr1
1
2
3
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CB
= –20V, I
E
= 0
V
CE
= –10V, I
B
= 0
V
CE
= –10V, I
C
= –2mA
I
C
= –100mA, I
B
= –10mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
160
– 0.3
80
2.7
min
–60
–50
–7
– 0.1
–100
460
– 0.5
V
MHz
pF
typ
max
Unit
V
V
V
µA
µA
0 to 0.05
0.1 to 0.3
0.8
0.16
–0.06
+0.2
s
Basic Part Number of Element
+0.1
1.45±0.1
s
Features
0.5
–0.05
+0.1
+0.1
1