Composite Transistors
P
T
— Ta
500
60
Ta=25˚C
I
B
=160µA
XN1501
I
C
— V
CE
1200
V
CE
=10V
Ta=25˚C
1000
I
B
— V
BE
Total power dissipation P
T
(mW)
Collector current I
C
(mA)
400
50
40
Base current I
B
(
µA
)
140µA
120µA
100µA
30
80µA
20
60µA
40µA
10
20µA
800
300
600
200
400
100
200
0
0
40
80
120
160
0
0
2
4
6
8
10
0
0
0.2
0.4
0.6
0.8
1.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V )
I
C
— V
BE
240
V
CE
=10V
200
200
240
V
CE
=10V
Ta=25˚C
I
C
— I
B
100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
30
10
3
1
0.3
0.1
0.03
0.01
0.1
25˚C
Ta=75˚C
Collector current I
C
(mA)
160
Collector current I
C
(mA)
160
120
Ta=75˚C
80
25˚C
120
–25˚C
80
40
40
–25˚C
0
0
0.4
0.8
1.2
1.6
2.0
0
0
200
400
600
800
1000
0.3
1
3
10
30
100
Base to emitter voltage V
BE
(V)
Base current I
B
(
µA
)
Collector current I
C
(mA)
h
FE
— I
C
600
V
CE
=10V
300
f
T
— I
E
240
NV — I
C
V
CB
=10V
Ta=25˚C
V
CE
=10V
G
V
=80dB
200 Function=FLAT
Ta=25˚C
160
Forward current transfer ratio h
FE
500
Transition frequency f
T
(MHz)
400
Ta=75˚C
25˚C
180
Noise voltage NV (mV)
240
300
–25˚C
120
R
g
=100kΩ
120
200
80
22kΩ
4.7kΩ
100
60
40
0
0.1
0.3
1
3
10
30
100
0
–0.1 –0.3
–1
–3
–10
–30
–100
0
10
20 30 50
100
200 300 500 1000
Collector current I
C
(mA)
Emitter current I
E
(mA)
Collector current I
C
(
µA
)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
