Composite Transistors
XN1401
Silicon PNP epitaxial planer transistor
Unit: mm
For general amplification
2.8
-0.3
0.65±0.15
+0.2
+0.25
1.5
-0.05
5
0.65±0.15
1
0.95
2.9
-0.05
q
q
Two elements incorporated into one package.
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
4
0.95
3
2
0.3
-0.05
0.4±0.2
0.16
-0.06
+0.1
1.1
-0.1
q
2SB709A
×
2 elements
0.8
s
Basic Part Number of Element
+0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
–60
–50
–7
–100
–200
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
0 to 0.1
0.1 to 0.3
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol:
5V
Internal Connection
5
4
3
2
Tr1
1
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
(Ta=25˚C)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
h
FE
(small/large)
*1
V
CE(sat)
f
T
C
ob
Conditions
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CB
= –20V, I
E
= 0
V
CE
= –10V, I
B
= 0
V
CE
= –10V, I
C
= –2mA
V
CE
= –10V, I
C
= –2mA
I
C
= –100mA, I
B
= –10mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
160
0.5
0.99
– 0.3
80
2.7
– 0.5
V
MHz
pF
min
–60
–50
–7
– 0.1
–100
460
typ
max
Unit
V
V
V
µA
µA
Ratio between 2 elements
+0.1
1.45±0.1
s
Features
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
