UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
s
Electrical Characteristics
Parameter
Collector cutoff current
UN9211
UN9212/9214/921E/921D
Emitter
cutoff
current
UN9213/UNR921M/921N/UNR921AJ
UN9215/9216/9217/9210/UNR921BJ
UN921F/921K
UN9219
UN9218/921L/UNR921CJ
Collector to base voltage
Collector to emitter voltage
UN9211
UN9212/921E
Forward
current
transfer
ratio
UN9213/9214/921M/UNR921AJ/921CJ
(Ta=25˚C)
Symbol
I
CBO
I
CEO
Conditions
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
min
typ
max
0.1
0.5
0.5
0.2
0.1
I
EBO
V
EB
= 6V, I
C
= 0
0.01
1.0
1.5
2.0
V
CBO
V
CEO
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
50
50
35
60
80
V
CE
= 10V, I
C
= 5mA
160
30
20
80
V
CE(sat)
V
OH
I
C
= 10mA, I
B
= 0.3mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 2.5V, R
L
= 1kΩ
V
OC
= 5V, V
B
= 3.5V, R
1
= 1kΩ
V
OL
V
CC
= 5V, V
B
= 10V, R
1
= 1kΩ
V
CC
= 5V, V
B
= 6V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 5V, R
L
= 1kΩ
f
T
V
CB
= 10V, I
E
= –2mA, f = 200MHz
150
10
22
47
R
1
(–30%)
4.7
0.51
1
100
(+30%)
kΩ
4.9
0.2
0.2
0.2
0.2
0.2
MHz
V
400
0.25
V
V
460
V
V
mA
Unit
µA
µA
UN9215*/9216*/9217*/9210*/UNR921BJ h
FE
UN921F/921D/9219
UN9218/921K/921L
UN921N
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
UN9213/921K/UNR921BJ
UN921D
UN921E
UNR921AJ
Transition frequency
UN9211/9214/9215/921K
UN9212/9217
Input
resis-
tance
UN9213/921D/921E/9210
UN9216/921F/921L/UNR921N
UN9218
UN9219/UNR921M
UNR921AJ/921BJ
* h
FE
rank classification (UN9215/9216/9217/9210)
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
