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UN5216 参数 Datasheet PDF下载

UN5216图片预览
型号: UN5216
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面晶体管 [Silicon NPN epitaxial planer transistor]
分类和应用: 晶体晶体管
文件页数/大小: 17 页 / 236 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
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Transistors with built-in Resistor
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Silicon NPN epitaxial planer transistor
For digital circuits
2.1±0.1
Unit: mm
s
Features
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
q
3
2
0.9±0.1
0 to 0.1
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
Marking Symbol (R
1
)
UN5211
8A
10kΩ
UN5212
8B
22kΩ
UN5213
8C
47kΩ
UN5214
8D
10kΩ
UN5215
8E
10kΩ
UN5216
8F
4.7kΩ
UN5217
8H
22kΩ
UN5218
8I
0.51kΩ
UN5219
8K
1kΩ
UN5210
8L
47kΩ
UN521D
8M
47kΩ
UN521E
8N
47kΩ
UN521F
8O
4.7kΩ
UN521K
8P
10kΩ
UN521L
8Q
4.7kΩ
UN521M
EL
2.2kΩ
UN521N
EX
4.7kΩ
UN521T
EZ
22kΩ
UN521V
FD
2.2kΩ
UN521Z
FF
4.7kΩ
(R
2
)
10kΩ
22kΩ
47kΩ
47kΩ
5.1kΩ
10kΩ
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
0.7±0.1
0.2±0.1
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC–70
S–Mini Type Package
Internal Connection
R1
C
B
R2
E
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
50
50
100
150
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
0.15
-0.05
+0.1
s
Resistance by Part Number
0.2
0.3
-0
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
S-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
+0.1
1