UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
10000
3000
V
O
=5V
Ta=25˚C
V
IN
— I
O
100
30
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
1000
300
100
30
10
3
10
3
1
0.3
0.1
0.03
0.01
0.1
3
2
1
0
0.1
0.3
1
3
10
30
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UN5217
I
C
— V
CE
120
100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
I
C
/I
B
=10
400
h
FE
— I
C
V
CE
=10V
100
30
10
3
1
0.3
25˚C
0.1
0.03
0.01
0.1
Forward current transfer ratio h
FE
Collector current I
C
(mA)
I
B
=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
350
300
250
200
Ta=75˚C
150
100
50
0
25˚C
–25˚C
80
0.4mA
0.3mA
0.2mA
60
Ta=75˚C
40
20
0.1mA
–25˚C
0.3
1
3
10
30
100
0
0
2
4
6
8
10
12
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
10000
3000
V
O
=5V
Ta=25˚C
100
30
V
IN
— I
O
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
1000
300
100
30
10
3
10
3
1
0.3
0.1
0.03
0.01
0.1
3
2
1
0
0.1
0.3
1
3
10
30
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
8
PANASONIC [ PANASONIC SEMICONDUCTOR ]
