UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
s
Electrical Characteristics
Parameter
Collector cutoff current
UN5211
UN5212/5214/521E/521D/521M/521N/521T
UN5213
Emitter
cutoff
current
UN5215/5216/5217/5210
UN521F/521K
UN5219
UN5218/521L/521V
UN521Z
Collector to base voltage
Collector to emitter voltage
UN5211
UN5212/521E
UN5213/5214/521M
Forward
current
transfer
ratio
UN5215*/5216*/5217*/5210*
UN521F/521D/5219
UN5218/521K/521L
UN521N/521T
UN521V
UN521Z
Collector to emitter saturation voltage
UN521V
Output voltage high level
Output voltage low level
UN5213/521K
UN521D
UN521E
Transition frequency
UN5211/5214/5215/521K
UN5212/5217/521T
Input
resis-
tance
UN5213/521D/521E/5210
UN5216/521F/521L/521N/521Z
UN5218
UN5219
UN521M/521V
(Ta=25˚C)
Symbol
I
CBO
I
CEO
Conditions
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
min
typ
max
0.1
0.5
0.5
0.2
0.1
I
EBO
V
EB
= 6V, I
C
= 0
0.01
1.0
1.5
2.0
0.4
V
CBO
V
CEO
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
50
50
35
60
80
160
h
FE
V
CE
= 10V, I
C
= 5mA
30
20
80
6
60
V
CE(sat)
V
OH
I
C
= 10mA, I
B
= 0.3mA
I
C
= 10mA, I
B
= 1.5mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 2.5V, R
L
= 1kΩ
V
OL
V
OC
= 5V, V
B
= 3.5V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 10V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 6V, R
L
= 1kΩ
f
T
V
CB
= 10V, I
E
= –2mA, f = 200MHz
150
10
22
47
R
1
(–30%)
4.7
0.51
1
2.2
(+30%)
kΩ
4.9
0.2
0.2
0.2
0.2
MHz
V
400
20
200
0.25
0.25
V
V
V
460
V
V
mA
Unit
µA
µA
* h
FE
rank classification (UN5125/5216/5217/5210)
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
