UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
V
IN
— I
O
V
O
=–5V
Ta=25˚C
–100
–30
V
O
=–0.2V
Ta=25˚C
–10000
–3000
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
–0.6
–0.8
–1.0
–1.2
–1.4
–1000
–300
–100
–30
–10
–3
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
3
2
1
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–1
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UN5117
I
C
— V
CE
–120
–100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
I
C
/I
B
=10
400
h
FE
— I
C
V
CE
= –10V
–100
Collector current I
C
(mA)
–80
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–10
–3
–1
–0.3
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
25˚C
Ta=75˚C
Forward current transfer ratio h
FE
–30
300
–60
–0.3mA
–0.2mA
–20
–0.1mA
200
Ta=75˚C
–40
25˚C
100
–25˚C
0
0
–2
–4
–6
–8
–10
–12
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
–10000
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
V
O
=–5V
Ta=25˚C
–100
–30
V
IN
— I
O
V
O
=–0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
–3000
5
Output current I
O
(
µA
)
4
–300
–100
–30
–10
–3
Input voltage V
IN
(V)
–0.6
–0.8
–1.0
–1.2
–1.4
–1000
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
3
2
1
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–1
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
8
PANASONIC [ PANASONIC SEMICONDUCTOR ]
