UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
s
Electrical Characteristics
Parameter
Collector cutoff current
UN2211
UN2212/2214/221E/221D/221M/221N/221T
UN2213
Emitter
cutoff
current
UN2215/2216/2217/2210
UN221F/221K
UN2219
UN2218/221L/221V
UN221Z
Collector to base voltage
Collector to emitter voltage
UN2211
UN2212/221E
Forward
current
transfer
ratio
UN2213/2214/221M
UN2215*/2216*/2217*/2210*
UN221F/221D/2219
UN2218/221K/221L
UN221N/221T
UN221V
Collector to emitter saturation voltage
UN221V
Output voltage high level
Output voltage low level
UN2213/221K
UN221D
UN221E
Transition frequency
UN2211/2214/2215/221K
UN2212/2217/221T
Input
resis-
tance
UN2213/221D/221E/2210
UN2216/221F/221L/221N/221Z
UN2218
UN2219
UN221M/221V
(Ta=25˚C)
Symbol
I
CBO
I
CEO
Conditions
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
min
typ
max
0.1
0.5
0.5
0.2
0.1
I
EBO
V
EB
= 6V, I
C
= 0
0.01
1.0
1.5
2.0
0.4
V
CBO
V
CEO
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
50
50
35
60
80
h
FE
V
CE
= 10V, I
C
= 5mA
160
30
20
80
60
V
CE(sat)
V
OH
I
C
= 10mA, I
B
= 0.3mA
I
C
= 10mA, I
B
= 1.5mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 2.5V, R
L
= 1kΩ
V
OL
V
CC
= 5V, V
B
= 3.5V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 10V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 6V, R
L
= 1kΩ
f
T
V
CB
= 10V, I
E
= –2mA, f = 200MHz
150
10
22
47
R
1
(–30%)
4.7
0.51
1
2.2
(+30%)
kΩ
4.9
0.2
0.2
0.2
0.2
MHz
V
0.04
400
200
0.25
0.25
V
V
—
460
V
V
mA
Unit
µA
µA
* h
FE
rank classification (UN2215/2216/2217/2210)
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
