UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN2215
I
C
— V
CE
160
V
CE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=10
400
V
CE
=10V
30
10
3
1
0.3
0.1
0.03
0.01
0.1
25˚C
Forward current transfer ratio h
FE
140
I
B
=1.0mA
0.9mA
0.8mA
Ta=25˚C
Collector to emitter saturation voltage V
CE(sat)
(V)
350
300
250
200
25˚C
150
100
50
0
–25˚C
Ta=75˚C
Collector current I
C
(mA)
120
100
80
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
60
0.2mA
40
20
0
0
2
4
6
8
10
12
0.1mA
Ta=75˚C
–25˚C
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
10000
3000
V
O
=5V
Ta=25˚C
100
30
V
IN
— I
O
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
300
100
30
10
3
Input voltage V
IN
(V)
0.6
0.8
1.0
1.2
1.4
1000
10
3
1
0.3
0.1
0.03
0.01
0.1
3
2
1
0
0.1
0.3
1
3
10
30
100
1
0.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UN2216
I
C
— V
CE
160
V
CE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=10
400
V
CE
=10V
350
Ta=75˚C
300
250
–25˚C
200
150
100
50
0
25˚C
Ta=25˚C
140
I
B
=1.0mA
Collector to emitter saturation voltage V
CE(sat)
(V)
30
10
3
1
0.3
Ta=75˚C
0.1
0.03
0.01
0.1
25˚C
120
100
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
80
60
40
20
0
0
2
4
6
8
0.4mA
0.3mA
0.2mA
0.1mA
–25˚C
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
10
12
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Forward current transfer ratio h
FE
Collector current I
C
(mA)
Collector current I
C
(mA)
7
PANASONIC [ PANASONIC SEMICONDUCTOR ]
