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UN2213 参数 Datasheet PDF下载

UN2213图片预览
型号: UN2213
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面晶体管 [Silicon NPN epitaxial planer transistor]
分类和应用: 晶体晶体管
文件页数/大小: 17 页 / 236 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
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Transistors with built-in Resistor
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Silicon NPN epitaxial planer transistor
For digital circuits
0.65±0.15
2.8
–0.3
+0.2
Unit: mm
0.65±0.15
1.5
–0.05
+0.25
s
Features
0.95
q
2
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
Marking Symbol (R
1
)
UN2211
8A
10kΩ
UN2212
8B
22kΩ
UN2213
8C
47kΩ
UN2214
8D
10kΩ
UN2215
8E
10kΩ
UN2216
8F
4.7kΩ
UN2217
8H
22kΩ
UN2218
8I
0.51kΩ
UN2219
8K
1kΩ
UN2210
8L
47kΩ
UN221D
8M
47kΩ
UN221E
8N
47kΩ
UN221F
8O
4.7kΩ
UN221K
8P
10kΩ
UN221L
8Q
4.7kΩ
UN221M
EL
2.2kΩ
UN221N
EX
4.7kΩ
UN221T
EZ
22kΩ
UN221V
FD
2.2kΩ
UN221Z
FF
4.7kΩ
(R
2
)
10kΩ
22kΩ
47kΩ
47kΩ
5.1kΩ
10kΩ
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
1.1
–0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
0 to 0.1
0.1 to 0.3
0.4±0.2
0.8
C
B
R2
E
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
50
50
100
200
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
0.16
–0.06
+0.2
+0.1
s
Resistance by Part Number
0.4
–0.05
+0.1
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
2.9
–0.05
1
1.9±0.2
+0.2
0.95
3
1.45
1