Composite Transistors
XP06211
(XP6211)
Silicon NPN epitaxial planar type
(0.425)
For switching/digital circuits
0.2
±0.05
Unit: mm
0.12
+0.05
–0.02
■
Features
•
Two elements incorporated into one package
(Transistors with built-in resistor)
•
Reduction of the mounting area and assembly cost by one half
6
5
4
1.25
±0.10
2.1
±0.1
1
2
3
■
Basic Part Number
•
UNR2211 (UN2211)
×
2
10˚
(0.65) (0.65)
1.3
±0.1
2.0
±0.1
0.9
±0.1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
150
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
EIAJ : SC-88
0 to 0.1
Marking Symbol: 7Z
Internal Connection
6
5
4
Tr2
Tr1
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
f
T
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 kΩ
1
2
0.9
+0.2
–0.1
■
Absolute Maximum Ratings
T
a
=
25°C
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
SMini6-G1 Package
3
Min
50
50
Typ
Max
Unit
V
V
µA
µA
mA
0.1
0.5
0.5
35
0.25
4.9
0.2
−30%
0.8
10
1.0
150
+30%
1.2
V
V
V
kΩ
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: June 2003
SJJ00206BED
0.2
±0.1
5˚
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
