UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
UN2111
Symbol
ICBO
Conditions
VCB = –50V, IE = 0
VCE = –50V, IB = 0
min
typ
max
– 0.1
– 0.5
– 0.5
– 0.2
– 0.1
– 0.01
–1.0
Unit
µA
ICEO
µA
UN2112/2114/211E/211D/211M/211N/211T
UN2113
Emitter
cutoff
current
UN2115/2116/2117/2110
UN211F/211H
UN2119
IEBO
VEB = –6V, IC = 0
mA
–1.5
UN2118/211L/211V
UN211Z
–2.0
– 0.4
Collector to base voltage
Collector to emitter voltage
UN2111
VCBO
VCEO
IC = –10mA, IE = 0
IC = –2mA, IB = 0
–50
–50
35
60
80
160
30
20
80
6
V
V
UN2112/211E
UN2113/2114/211M
Forward
current
transfer
ratio
UN2115*/2116*/2117*/2110*
460
UN2119/211F/211D/211H hFE
UN2118/211L
VCE = –10V, IC = –5mA
UN211N/211T
UN211V
400
20
UN211Z
60
200
Collector to emitter saturation voltage
UN211V
IC = –10mA, IB = – 0.3mA
– 0.25
– 0.25
V
V
V
VCE(sat)
VOH
IC = –10mA, IB = –1.5mA
– 0.07
Output voltage high level
Output voltage low level
UN2113
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
VCC = –5V, VB = –3.5V, RL = 1kΩ
VCC = –5V, VB = –10V, RL = 1kΩ
VCC = –5V, VB = –6V, RL = 1kΩ
VCB = –10V, IE = 1mA, f = 200MHz
–4.9
– 0.2
– 0.2
– 0.2
– 0.2
VOL
V
UN211D
UN211E
Transition frequency
UN2111/2114/2115
UN2112/2117/211T
fT
80
10
MHz
22
UN2113/2110/211D/211E
Input
47
resis-
tance
UN2116/211F/211L/211N/211Z R1
(–30%)
4.7
0.51
1
(+30%)
kΩ
UN2118
UN2119
UN211H/211M/211V
2.2
* hFE rank classification (UN2115/2116/2117/2110)
Rank
hFE
Q
R
S
160 to 260
210 to 340
290 to 460
2
PANASONIC [ PANASONIC ]
