UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
s
Electrical Characteristics
Parameter
Collector cutoff current
UN2111
UN2112/2114/211E/211D/211M/211N/211T
UN2113
Emitter
cutoff
current
UN2115/2116/2117/2110
UN211F/211H
UN2119
UN2118/211L/211V
UN211Z
Collector to base voltage
Collector to emitter voltage
UN2111
UN2112/211E
UN2113/2114/211M
Forward
current
transfer
ratio
UN2115*/2116*/2117*/2110*
UN2119/211F/211D/211H
UN2118/211L
UN211N/211T
UN211V
UN211Z
Collector to emitter saturation voltage
UN211V
Output voltage high level
Output voltage low level
UN2113
UN211D
UN211E
Transition frequency
UN2111/2114/2115
UN2112/2117/211T
Input
resis-
tance
UN2113/2110/211D/211E
(Ta=25˚C)
Symbol
I
CBO
I
CEO
Conditions
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
min
typ
max
– 0.1
– 0.5
– 0.5
– 0.2
– 0.1
I
EBO
V
EB
= –6V, I
C
= 0
– 0.01
–1.0
–1.5
–2.0
– 0.4
V
CBO
V
CEO
I
C
= –10mA, I
E
= 0
I
C
= –2mA, I
B
= 0
–50
–50
35
60
80
160
h
FE
V
CE
= –10V, I
C
= –5mA
30
20
80
6
60
V
CE(sat)
V
OH
I
C
= –10mA, I
B
= – 0.3mA
I
C
= –10mA, I
B
= –1.5mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –2.5V, R
L
= 1kΩ
V
OL
V
CC
= –5V, V
B
= –3.5V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –10V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –6V, R
L
= 1kΩ
f
T
V
CB
= –10V, I
E
= 1mA, f = 200MHz
80
10
22
47
(–30%)
4.7
0.51
1
2.2
(+30%)
kΩ
–4.9
– 0.2
– 0.2
– 0.2
– 0.2
MHz
V
– 0.07
400
20
200
– 0.25
– 0.25
V
V
V
460
V
V
mA
Unit
µA
µA
UN2116/211F/211L/211N/211Z R
1
UN2118
UN2119
UN211H/211M/211V
* h
FE
rank classification (UN2115/2116/2117/2110)
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
