Schottky Barrier Diodes (SBD)
MA3J742
(MA742)
Silicon epitaxial planar type
Unit: mm
For switching
3
0.3
+0.1
–0
0.15
+0.1
–0.05
•
Two MA3X716 (MA716) is contained in one package (series
connection)
•
Low forward voltage V
F
, optimum for low voltage rectification
•
Optimum for high frequency rectification because of its short
reverse recovery time (t
rr
)
•
S-Mini type 3-pin package
1.25
±0.1
2.1
±0.1
I
Features
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
5°
0.9
±0.1
0 to 0.1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Single
Series
*
Peak forward current Single
Series
*
Junction temperature
Storage temperature
Note) *: Value per chip
T
j
T
stg
I
FM
Symbol
V
R
V
RM
I
F
Rating
30
30
30
20
150
110
125
−55
to
+125
°C
°C
mA
Unit
V
V
mA
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
SMini3-F1 Package
Marking Symbol: M1U
Internal Connection
3
1
2
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
Detection efficiency
*
Conditions
V
R
=
30 V
I
F
=
1 mA
I
F
=
30 mA
V
R
=
1 V, f
=
1 MHz
I
F
=
I
R
= 10 mA
I
rr
=
1 mA, R
L
=
100
Ω
V
in
=
3 V
(peak)
, f
=
30 MHz
R
L
=
3.9 kΩ, C
L
=
10 pF
Min
Typ
Max
1
0.4
1
(0.15)
Unit
µA
V
C
t
t
rr
h
1.5
1
65
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: t
rr
measuring instrument
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
1 mA
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
SKH00056AED
(0.425)
5°
pF
ns
%
Publication date: August 2001
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
