Schottky Barrier Diodes (SBD)
MA2Q736
(MA736)
Silicon epitaxial planar type
Unit: mm
2.5
±0.3
2
2.15
±0.3
1.2
±0.4
1.2
±0.4
5.0
+0.4
–0.1
8°
1
8°
0.25
+0.1
–0.05
For high frequency rectification
I
Features
•
I
F(AV)
=
1 A rectification is possible
•
V
R
=
40 V is guaranteed
•
Automatic insertion with the emboss taping is possible
•
New Mini-power 2-pin package
4.4
±0.3
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Average forward current
*1
Non-repetitive peak forward-
surge-current
*2
Junction temperature
Storage temperature
Symbol
V
R
V
RRM
I
F(AV)
I
FSM
T
j
T
stg
Rating
40
40
1
30
−40
to
+125
−40
to
+125
Unit
V
V
A
A
°C
°C
1.4
±0.2
0 to 0.05
1 : Anode
2 : Cathode
NMiniP2-J1 Package
Marking Symbol: PB
Note) *1: With a printed circuit board (copper foil area 2 mm
×
2 mm or
more on both cathode and anode sides)
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
C
t
t
rr
V
R
=
40 V
I
F
=
1 A
V
R
=
10 V, f
=
1 MHz
I
F
=
I
R
=
100 mA
I
rr
=
10 mA, R
L
=
100
Ω
50
30
Conditions
Min
Typ
Max
2
0.55
Unit
mA
V
pF
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 20 MHz
3. *: t
rr
measuring instrument
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
10 mA
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00019AED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
